Gate stack engineering has helped enable aggressive device scaling in silicon complementary metal–oxide–semiconductor technology. Two-dimensional (2D) materials are a potential replacement for silicon ...

The first commercial transistors had a top-down structure made entirely of silicon: specifically, a polysilicon gate electrode, a thin (~20 nm) SiO 2 dielectric and a silicon bulk channel 1,2. In the ...

After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size ...